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 High Voltage Generator Subsystem  

Implementation

     The High Voltage subsystem shown above is responsible for creating the corona discharge and is controlled by the flame control subsystem.

  • The flame control subsystem acts as a gateway between the audio signal and the high voltage generator. The high voltage generator will create inductive voltage spikes by way of a solid-state device such as a Field-Effect Transistor (FET). The voltage spikes will constantly change the corona discharge output size, producing sound waves.
  • A Faraday shield will be used to block electromagnetic waves from being transmitted through the air.
    MOSFETS:
  1. http://www.fairchildsemi.com/ds/FQ/FQPF1N60.pdf. : FQPF1N60. 600v power MOSFET, Ron=11.6 ohms, Id (pulsed.)=3.6A, tr+tf=49ns, Cgate=140pF.
  2. http://us.st.com/stonline/prodpres/discrete/powebipo/bipcros.htm : ST Transistor cross reference.
  3. http://eu.st.com/stonline/products/selector/232.htm : ST electronics Very High Voltage Power MOSFETs. Up 1kv ratings.
  4. http://eu.st.com/stonline/books/pdf/docs/6249.pdf : STP3NB100. 1kv power MOSFET, Ron=6 ohms, Id (pulsed.)=12A, switching times not yet rated.
  5. IRFPG50 Vdss=1kv, Rds(on)=2 ohms, Id=6A, f=~5MHz. spice model.
  6. IRFPG30 Vdss=1kv, Rds(on)=5 ohms, Id=3A, f=~10MHz. short.
    MOSFET Gate Drivers
  1. TPS28xx series where xx="16-19, 28, 29". TPS2828/29 drive 2A peak, with t(on)+t(off)=28ns, t(prop)=~45ns total, Rin=1G ohms, Cin=5pf, SOT-23 package. ~$0.60 each.
  2. TPS2828 product folder.
  3. TPS28XX series where xx="11-15".
  4. TPS2814 product folder.
    IGBT's
  1. http://eu.st.com/stonline/prodpres/discrete/igbt/products.htm : IGBT product page.
  2. http://eu.st.com/stonline/books/pdf/docs/6665.pdf : STGB3NB60HD IGBT. VCES = 600v, td(on)=16ns, tr(Voff)=36ns.
  3. http://www.us.st.com/stonline/books/pdf/docs/7087.pdf : STGD7NB120S-1 IGBT. VCES = 1200v, td(on)=570ns, tr(Voff)=3.3us.
    BJT's
  1. http://us.st.com/stonline/books/toc/dc/189.htm : Power Bipolar Transistors Table of Contents.
  2. http://us.st.com/stonline/books/pdf/docs/4491.pdf : BU208A/BU508A BJT. VCES=1500v, IC=8A, tf=550ns, Transition frequency=7MHz.
  3. http://us.st.com/stonline/books/pdf/docs/4519.pdf : BU808DFI Darlington BJT. VCES=1400v, IC=8A, tf=0.8us.
  4. http://us.st.com/stonline/books/pdf/docs/4496.pdf : BUH1215 BJT. VCEV=1500v, IC=16A, tf=180ns.
  5. http://us.st.com/stonline/books/pdf/docs/4497.pdf : BUH2M20AP BJT. VCBO=2000v, IC=0.03A, tf=180ns.

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